Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization

Carrier localization can be modeled as a parameter of reduced effective volumes of the active region within the efficiency equation to describe efficiency droop of InGaN light-emitting diodes (LEDs). Reduced effective volume due to carrier localized in the potential minima of In-rich areas results in an increase of carrier density, which accelerates the saturation of radiative recombination as well as the loss of Auger recombination and carrier overflow. Wavelength-dependent droop can be well modeled with different reduced effective volumes of the active region.

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