Wide-band hybrid power amplifier design using GaN FETs

In this article, the design, fabrication, and testing of a wide band single-ended power amplifier (PA) using GaN field effect transistors (FETs) are reported. The single-ended amplifier demonstrates a bandwidth larger than 30% around 2 GHz, with a high gain, PAE, and output power combination. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.

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