On the occurrence of {113}; facets on CVD-grown diamond

[1]  W. V. Enckevort,et al.  Characterization of single-crystal diamond grown by chemical vapour deposition processes , 1992 .

[2]  E. Pfender,et al.  High temperature, high rate homoepitaxial synthesis of diamond in a thermal plasma reactor , 1991 .

[3]  W. V. Enckevort,et al.  Thermal chemical vapour deposition of homoepitaxial diamond: dependence of surface morphology and defect structure on substrate orientation , 1991 .

[4]  L. J. Giling,et al.  Anisotropy in monocrystalline CVD diamond growth I. A sphere growth experiment , 1991 .

[5]  Leonard M. Hanssen,et al.  High temperature, high rate homoepitaxial growth of diamond in an atmospheric pressure flame , 1991 .

[6]  N. Fujimori,et al.  Epitaxially Grown Diamond (001) 2×1/1×2 Surface Investigated by Scanning Tunneling Microscopy in Air , 1991 .

[7]  J. Gardeniers,et al.  Reduced pressure silicon CVD on hemispherical substrates , 1991 .

[8]  G. Kubiak,et al.  Hydrogen chemisorption and the structure of the diamond C(100)-(2 × 1) surface , 1990 .

[9]  W. V. Enckevort,et al.  Rapid single crystalline diamond growth by acetylene-oxygen flame deposition , 1990 .

[10]  S. Harris.  Mechanism for diamond growth from methyl radicals , 1990 .

[11]  J. Gardeniers,et al.  The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD , 1990 .

[12]  J. Gardeniers.  Crystal habit of CVD-grown silicon in relation to adsorption processes , 1990 .

[13]  J. Gardeniers,et al.  Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zones , 1989 .

[14]  J. Gardeniers,et al.  Influence of temperature on the crystal habit of silicon in the SiHCl CVD system I. Experimental results , 1989 .

[15]  L. J. Giling,et al.  On the influence of surface reconstruction on crystal growth processes , 1985 .

[16]  L. J. Giling,et al.  The influence of adsorption and step reconstruction on the growth and etching vectors of silicon (111) , 1978 .

[17]  C. V. D. Brekel.  Growth rate anisotropy and morphology of autoepitaxial silicon films from SiCl4 , 1974 .

[18]  P. Hartman.  The non-uniform distribution of faces in a zone , 1965 .