Electroluminescence from thin film of a semiconducting oligothiophene deposited in ultrahigh vacuum

Abstract The thin film of a semiconducting oligomer of dimethylsexithiophene (DMSxT) deposited in ultrahigh vacuum has a highly ordered layered structure. We have fabricated the organic light-emitting diodes (LEDs) using DMSxT and carried out electrical and optical measurements. A red-orange emission is clearly observed above 4 V forward bias. These LEDs have a configuration of Al/DMSxT/ITO and show a rectifying ratio of about 1500 at ± 10 V bias. This is the first report of an organic LED using a semiconducting oligomer as a light-emitting layer.