Mid-infrared interband cascade lasers operating at ambient temperatures
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William W. Bewley | James R. Lindle | Igor Vurgaftman | Chadwick L. Canedy | Chul Soo Kim | M. Kim | J. R. Meyer | I. Vurgaftman | J. Abell | J. Lindle | C. Kim | M. Kim | Joshua Abell | J. Meyer | C. Kim | W. W. Bewley | I. Vurgaftman | C. Canedy | J. Meyer | M. Kim | W. Bewley
[1] J. Buus,et al. Analytical approximation for the reflectivity of DH lasers , 1981, IEEE Journal of Quantum Electronics.
[2] Roland Teissier,et al. High temperature operation of λ≈3.3μm quantum cascade lasers , 2007 .
[3] William W. Bewley,et al. Gain, loss, and internal efficiency in interband cascade lasers emitting at λ=3.6–4.1μm , 2008 .
[4] William W. Bewley,et al. High-power and high-efficiency midwave-infrared interband cascade lasers , 2006 .
[5] Leon Shterengas,et al. Continuous wave operation of diode lasers at 3.36μm at 12°C , 2008 .
[6] I. Vurgaftman,et al. High-power continuous-wave midinfrared type-II “W” diode lasers , 2005 .
[7] Manijeh Razeghi,et al. Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency , 2008 .
[8] Jerry R. Meyer,et al. Type‐II quantum‐well lasers for the mid‐wavelength infrared , 1995 .
[9] Christopher L. Felix,et al. Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells , 1998 .
[10] Jorg Hader,et al. Microscopic analysis of mid-infrared type-II "w" diode lasers , 2009 .
[11] Rui Q. Yang,et al. Mid-infrared interband cascade lasers at thermoelectric cooler temperatures , 2006 .
[12] William W. Bewley,et al. High-power, narrow-ridge, mid-infrared interband cascade lasers , 2008 .
[13] Wolfgang Bronner,et al. High peak-power (10.5W) GaInAs∕AlGaAsSb quantum-cascade lasers emitting at λ∼3.6–3.8μm , 2007 .
[14] Rui Q. Yang. Infrared laser based on intersubband transitions in quantum wells , 1995 .
[15] I. Vurgaftman,et al. Interband Cascade Lasers with Wavelengths Spanning 2.9 μm to 5.2 μm , 2008 .
[16] Chenglu Lin,et al. Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers , 2004 .
[17] Sven Höfling,et al. Continuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm , 2008 .
[18] Rui Q. Yang,et al. Type-II interband quantum cascade laser at 3.8 /spl mu/m , 1997 .
[19] William W. Bewley,et al. Lifetimes and Auger coefficients in type-II W interband cascade lasers , 2008 .
[20] William W. Bewley,et al. Interband cascade laser emitting at λ=3.75μm in continuous wave above room temperature , 2008 .
[21] T. F. Boggess,et al. Auger recombination in narrow-gap semiconductor superlattices incorporating antimony , 2002 .
[22] Federico Capasso,et al. Widely tunable high-power external cavity quantum cascade laser operating in continuous-wave at room temperature , 2009 .
[23] Yong-Hang Zhang,et al. Midwave infrared stimulated emission from a GaInSb/InAs superlattice , 1995 .
[24] D. Sivco,et al. Mid-infrared quantum cascade lasers , 1994, Proceedings of LEOS'94.