Mid-infrared interband cascade lasers operating at ambient temperatures

We discuss the state-of-the-art performance of interband cascade lasers emitting in the 3?5??m spectral band. Broad-area devices with five active stages display pulsed threshold current densities as low as 400?A?cm?2 at room temperature. Auger decay rates are extracted from the analysis of threshold current densities and differential slope efficiencies of nearly 30 lasers, and found to be significantly lower than was anticipated based on prior information. New designs also produce ICLs with room-temperature internal losses as low as ?6?cm?1. The combination of these advances with improvements to the processing of narrow ridges has led to the fabrication of a 4.4-?m-wide ridge emitting at 3.7??m that lased to 335?K in continuous mode. This is the highest continuous-wave (cw) operating temperature for any semiconductor laser in the 3.0?4.6??m spectral range. A 10-?m-wide ridge with high-reflection and anti-reflection facet coatings produced up to 59?mW of cw power at 298?K, and displayed a maximum wall-plug efficiency of 3.4%.

[1]  J. Buus,et al.  Analytical approximation for the reflectivity of DH lasers , 1981, IEEE Journal of Quantum Electronics.

[2]  Roland Teissier,et al.  High temperature operation of λ≈3.3μm quantum cascade lasers , 2007 .

[3]  William W. Bewley,et al.  Gain, loss, and internal efficiency in interband cascade lasers emitting at λ=3.6–4.1μm , 2008 .

[4]  William W. Bewley,et al.  High-power and high-efficiency midwave-infrared interband cascade lasers , 2006 .

[5]  Leon Shterengas,et al.  Continuous wave operation of diode lasers at 3.36μm at 12°C , 2008 .

[6]  I. Vurgaftman,et al.  High-power continuous-wave midinfrared type-II “W” diode lasers , 2005 .

[7]  Manijeh Razeghi,et al.  Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency , 2008 .

[8]  Jerry R. Meyer,et al.  Type‐II quantum‐well lasers for the mid‐wavelength infrared , 1995 .

[9]  Christopher L. Felix,et al.  Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells , 1998 .

[10]  Jorg Hader,et al.  Microscopic analysis of mid-infrared type-II "w" diode lasers , 2009 .

[11]  Rui Q. Yang,et al.  Mid-infrared interband cascade lasers at thermoelectric cooler temperatures , 2006 .

[12]  William W. Bewley,et al.  High-power, narrow-ridge, mid-infrared interband cascade lasers , 2008 .

[13]  Wolfgang Bronner,et al.  High peak-power (10.5W) GaInAs∕AlGaAsSb quantum-cascade lasers emitting at λ∼3.6–3.8μm , 2007 .

[14]  Rui Q. Yang Infrared laser based on intersubband transitions in quantum wells , 1995 .

[15]  I. Vurgaftman,et al.  Interband Cascade Lasers with Wavelengths Spanning 2.9 μm to 5.2 μm , 2008 .

[16]  Chenglu Lin,et al.  Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers , 2004 .

[17]  Sven Höfling,et al.  Continuous wave single mode operation of GaInAsSb∕GaSb quantum well lasers emitting beyond 3μm , 2008 .

[18]  Rui Q. Yang,et al.  Type-II interband quantum cascade laser at 3.8 /spl mu/m , 1997 .

[19]  William W. Bewley,et al.  Lifetimes and Auger coefficients in type-II W interband cascade lasers , 2008 .

[20]  William W. Bewley,et al.  Interband cascade laser emitting at λ=3.75μm in continuous wave above room temperature , 2008 .

[21]  T. F. Boggess,et al.  Auger recombination in narrow-gap semiconductor superlattices incorporating antimony , 2002 .

[22]  Federico Capasso,et al.  Widely tunable high-power external cavity quantum cascade laser operating in continuous-wave at room temperature , 2009 .

[23]  Yong-Hang Zhang,et al.  Midwave infrared stimulated emission from a GaInSb/InAs superlattice , 1995 .

[24]  D. Sivco,et al.  Mid-infrared quantum cascade lasers , 1994, Proceedings of LEOS'94.