High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films

Depletion‐mode n‐channel metal‐oxide‐semiconductor field‐effect transistors were fabricated on n‐type β‐SiC (111) thin films epitaxially grown by chemical vapor deposition on the Si (0001) face of 6H α‐SiC single crystals. The gate oxide was thermally grown on the SiC; the source and drain were doped n+ by N+ ion implantation at 823 K. Stable saturation and low subthreshold current were achieved at drain voltages exceeding 25 V. Transconductances as high as 11.9 mS/mm were achieved. Stable transistor action was observed at temperatures as high as 923 K, the highest temperature reported to date for a transistor in any material.