论文信息 - The annealing behavior of oxide trapped charges and interface traps in fluorinated NMOSFETS

The annealing behavior of oxide trapped charges and interface traps in fluorinated NMOSFETS

The gate bias annealing of threshold voltage, oxide trapped charges and interface traps in fluorinated n-channel MOSFETs has been investigated. The annealing rate of oxide trapped charge is correlated with the value of gate bias. The annealing of interface traps has a turnaround effect. Switching gate bias during anneal results in the creation and banishment of oxide trapped charges. The annealing saturation appear after a long term anneal. The radiation damage can be restrained in fluorinated MOS oxides. Gate bias has a more significant influence on the build-up and annealing of oxide trapped charges in fluorinated NMOSFETs.

Guoqiang Zhang | Rongliang Yan | Diyuan Ren

[1] Daniel M. Fleetwood,et al. The role of border traps in MOS high-temperature postirradiation annealing response , 1993 .

[2] P. S. Winokur,et al. Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.

[3] Krishna C. Saraswat,et al. Hot-carrier-degradation characteristics for fluorine-incorporated nMOSFET's , 1990 .

[4] P. S. Winokur,et al. Physical Mechanisms Contributing to Device "Rebound" , 1984, IEEE Transactions on Nuclear Science.

[5] R. K. Lawrence,et al. Post-irradiation behavior of the interface state density and the trapped positive charge , 1990 .

[6] M. Gaitan,et al. Measurement of Radiation-Induced Interface Traps Using MOSFETs , 1984, IEEE Transactions on Nuclear Science.

[7] Yu Wang,et al. Dielectric characteristics of fluorinated ultradry SiO2 , 1989 .