Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy
暂无分享,去创建一个
Gaudenzio Meneghesso | Enrico Zanoni | Daisuke Ueda | Nicola Trivellin | Matteo Meneghini | Shinichi Takigawa | Kenji Orita | C. De Santi | D. Ueda | M. Meneghini | G. Meneghesso | E. Zanoni | C. D. Santi | N. Trivellin | Tsuyoshi Tanaka | S. Takigawa | Tsuneo Tanaka | K. Orita
[1] Gaudenzio Meneghesso,et al. Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements , 2010 .
[2] Y. S. Park,et al. Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect , 2010 .
[3] Shigetaka Tomiya,et al. Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes , 2010, Proceedings of the IEEE.
[4] Gaudenzio Meneghesso,et al. Reliability evaluation for Blu-Ray laser diodes , 2010, Microelectron. Reliab..
[5] In‐Hwan Lee,et al. Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire , 2010 .
[6] R. Czernecki,et al. Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates , 2009 .
[7] Gaudenzio Meneghesso,et al. Reliability analysis of InGaN Blu-Ray laser diode , 2009, Microelectron. Reliab..
[8] Dimitri Dini,et al. Burn-in mechanism of 450 nm InGaN ridge laser test structures , 2009 .
[9] M. Gokhale,et al. Charge deep level transient spectroscopy of electron traps in MOVPE grown n‐GaN on sapphire , 2008 .
[10] Steven A. Ringel,et al. Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy , 2008 .
[11] D. Look,et al. Deep level characteristics in n-GaN with inductively coupled plasma damage , 2008 .
[12] G. Meneghesso,et al. Extensive Analysis of the Degradation of Blu-Ray Laser Diodes , 2008, IEEE Electron Device Letters.
[13] Stewart Edward Hooper,et al. Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings , 2008 .
[14] Pierre Muret,et al. Electronic properties of the EC-0.6 eV electron trap in n-type GaN , 2008 .
[15] P. Wisniewski,et al. Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals , 2006 .
[16] Steven A. Ringel,et al. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon , 2005 .
[17] D. Look,et al. Identification of Donors, Acceptors, and Traps in Bulk-Like HVPE GaN , 2005 .
[18] Alfred Lell,et al. Facet degradation of GaN heterostructure laser diodes , 2005 .
[19] H. Morkoç,et al. Luminescence properties of defects in GaN , 2005 .
[20] K. Maezawa,et al. Drain current DLTS of AlGaN-GaN MIS-HEMTs , 2004, IEEE Electron Device Letters.
[21] H. Cho,et al. Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN , 2003 .
[22] L. Faraone,et al. 60Co gamma-irradiation-induced defects in n-GaN , 2002 .
[23] Hyung Jae Lee,et al. Electron traps and growth rate of buffer layers in unintentionally doped GaN , 2001 .
[24] Steven A. Ringel,et al. Hydrogen passivation of deep levels in n–GaN , 2000 .
[25] A. Krtschil. Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy , 2000 .
[26] M. C. Lee,et al. Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy , 2000 .
[27] José Luis Sánchez-Rojas,et al. Yellow luminescence and related deep states in undoped GaN , 1997 .
[28] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .