Stacked Gate-All-Around (GAA) nanosheet pFETs with compressively strained Si<inf>1-x</inf>Ge<inf>x</inf> channel have been fabricated to explore their electrical benefits. The Si<inf>1-x</inf>Ge<inf>x</inf> NS channel structure with high crystalline quality and 1GPa compressive stress has been realized for the first time. Systematic study has been performed to understand the effect of epitaxial Si<inf>1-x</inf>Ge<inf>x</inf> thickness, Ge fraction, and Si cap thickness on the Si<inf>1-x</inf>Ge<inf>x</inf> NS channel device characteristics. It is found that the compressively strained Si<inf>1-x</inf>Ge<inf>x</inf> NS channel provides a 100% uplift in peak hole mobility with a corresponding channel resistance reduction of 40% while maintaining an excellent subthreshold slope of below 70 mV/dec.