A Systematical Method of Quantifying SEU FIT

We present a practical, systematical method for the evaluation of the soft error rate (SER) of microelectronic devices. Existing methodologies, practices and tools are integrated in a common approach while highlighting the need for specific data or tools. The showcased method is particularly adapted for evaluating the SER of very complex microelectronic devices by engineers confronted to increasingly demanding reliability requirements.

[1]  P. Dodd,et al.  Production and propagation of single-event transients in high-speed digital logic ICs , 2004, IEEE Transactions on Nuclear Science.

[2]  Mehdi Baradaran Tahoori,et al.  An accurate SER estimation method based on propagation probability [soft error rate] , 2005, Design, Automation and Test in Europe.

[3]  K. Avery,et al.  Single event transient pulsewidth measurements using a variable temporal latch technique , 2004, IEEE Transactions on Nuclear Science.

[4]  R. Perez,et al.  Measuring the width of transient pulses induced by ionising radiation , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[5]  Dan Alexandrescu,et al.  New methods for evaluating the impact of single event transients in VDSM ICs , 2002, 17th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, 2002. DFT 2002. Proceedings..

[6]  Shi-Jie Wen,et al.  Specification and Verification of Soft Error Performance in Reliable Internet Core Routers , 2008, IEEE Transactions on Nuclear Science.

[7]  F. Brglez,et al.  On testability of combinational networks , 1984 .

[8]  Lorenzo Alvisi,et al.  Modeling the effect of technology trends on the soft error rate of combinational logic , 2002, Proceedings International Conference on Dependable Systems and Networks.

[9]  Fabrice Monteiro,et al.  Characterizing laser-induced pulses in ICs: methodology and results , 2006, 12th IEEE International On-Line Testing Symposium (IOLTS'06).

[10]  Dan Alexandrescu,et al.  Simulating Single Event Transients in VDSM ICs for Ground Level Radiation , 2004, J. Electron. Test..

[11]  K. J. Hass,et al.  Single event transients in deep submicron CMOS , 1999, 42nd Midwest Symposium on Circuits and Systems (Cat. No.99CH36356).

[12]  E. Cannon,et al.  SRAM SER in 90, 130 and 180 nm bulk and SOI technologies , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.