A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
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C. M. Andersson | H Zirath | E. Janzén | H. Zirath | N. Rorsman | N Rorsman | C M Andersson | N Ejebjork | A Henry | S Andersson | E Janzen | A. Henry | N. Ejebjork | S. Andersson
[1] Wei Lu,et al. InGaN/GaN Schottky Diodes With Enhanced Voltage Handling Capability for Varactor Applications , 2010, IEEE Electron Device Letters.
[2] Q. Wahab,et al. Ionization rates and critical fields in 4H silicon carbide , 1997 .
[3] H. Zirath,et al. Design of Varactor-Based Tunable Matching Networks for Dynamic Load Modulation of High Power Amplifiers , 2009, IEEE Transactions on Microwave Theory and Techniques.
[4] A. Henry,et al. Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques , 2006 .
[5] L.C.N. de Vreede,et al. A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_{3}$ of 57 dBm , 2010, IEEE Electron Device Letters.
[6] H M Nemati,et al. Design of Highly Efficient Load Modulation Transmitter for Wideband Cellular Applications , 2010, IEEE Transactions on Microwave Theory and Techniques.
[7] C. Fager,et al. SiC Varactors for Dynamic Load Modulation of High Power Amplifiers , 2008, IEEE Electron Device Letters.