Comparison of Junction Temperature Evaluations in a Power IGBT Module Using an IR Camera and Three Thermosensitive Electrical Parameters

The measurement of the junction temperature with thermosensitive electrical parameters (TSEPs) is largely used by electrical engineers or researchers, but the obtained temperature value is generally not verified by any referential information of the actual chip temperature distribution. In this paper, we propose to use infrared (IR) measurements in order to evaluate the relevance of three commonly used TSEPs with insulated gate bipolar transistor chips: the saturation voltage under a low current, the gate-emitter voltage, and the saturation current. TheIR measurements are presented in detail with an estimation of the emissivity of the black paint deposited on the power module. The temperatures obtained with IR measurements and with the different TSEPs are then compared in two cases: the use of only one chip and the use of two paralleled chips.

[1]  Fausto Fantini,et al.  Thermal characterization of IGBT power modules , 1997 .

[2]  Bruno Allard,et al.  Transient temperature measurements and modeling of IGBT's under short circuit , 1998 .

[3]  F. Kolonic,et al.  Important properties of transient thermal impedance for MOS-gated power semiconductors , 1999, ISIE '99. Proceedings of the IEEE International Symposium on Industrial Electronics (Cat. No.99TH8465).

[4]  M. P. Rodriguez,et al.  Static and dynamic finite element modelling of thermal fatigue effects in insulated gate bipolar transistor modules , 2000 .

[5]  Leonardo M. Hillkirk,et al.  Space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions , 2001 .

[6]  Z. Khatir,et al.  Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions , 2003, Microelectron. J..

[7]  C. Ellenwood,et al.  High speed IGBT module transient thermal response measurements for model validation , 2003, 38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003..

[8]  Leonardo M. Hillkirk,et al.  Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions , 2004 .

[9]  D. Blackburn.  Temperature measurements of semiconductor devices - a review , 2004, Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545).

[10]  Estimation and measurement of junction temperatures in a three-level voltage source converter , 2005, Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005..

[11]  Michel Mermet-Guyennet,et al.  Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current , 2006, Microelectron. Reliab..

[12]  Uwe Scheuermann,et al.  Using the chip as a temperature sensor — The influence of steep lateral temperature gradients on the Vce(T)-measurement , 2009, 2009 13th European Conference on Power Electronics and Applications.

[13]  W. Brekel,et al.  Time Resolved In Situ Tvj Measurements of 6 . 5 kV IGBTs during Inverter Operation , 2009 .

[14]  C Mark Johnson,et al.  Real-Time Compact Thermal Models for Health Management of Power Electronics , 2010, IEEE Transactions on Power Electronics.

[15]  Uwe Scheuermann,et al.  Power cycling results for different control strategies , 2010, Microelectron. Reliab..

[16]  Bin Du,et al.  Transient Electrothermal Simulation of Power Semiconductor Devices , 2010, IEEE Transactions on Power Electronics.

[17]  Khai D. T. Ngo,et al.  Characterization of Lead-Free Solder and Sintered Nano-Silver Die-Attach Layers Using Thermal Impedance , 2011, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[18]  Janusz Zarebski,et al.  The Electrothermal Large-Signal Model of Power MOS Transistors for SPICE , 2010, IEEE Transactions on Power Electronics.

[19]  Characterization of Lead-Free Solder and Sintered Nano-Silver Die-Attach Layers Using Thermal Impedance , 2011, IEEE Transactions on Components, Packaging and Manufacturing Technology.