Electronic properties of InGaAsP epitaxial layer surfaces
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[1] R. Sodhi,et al. Electronic passivation of GaP surfaces using (NH4)2S treatment , 1992 .
[2] Y. Hamakawa,et al. A Study on LPE Growth of In1-xGaxP1-yAsy(y ≃0) on (100) GaAs Substrate , 1985 .
[3] Y. Hamakawa,et al. LPE Growth of In1-xGaxP0.96As0.04 on GaAs Substrate by Two-Phase Melt Method. , 1985 .
[4] S. Mukai. Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAs , 1983 .