Modeling temperature dependency (6 – 400K) of the leakage current through the SiO2/high-K stacks
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L. Larcher | G. Bersuker | W. B. Knowlton | A. Padovani | L. Larcher | A. Padovani | G. Bersuker | L. Vandelli | R. Southwick | L. Vandelli | R.G. Southwick | W.B. Knowlton
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