Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

A synthesis of the most frequent transient phenomena due to floating-body effects in partially depleted SOI MOSFET's is presented. The dominant physical mechanisms are examined through a variety of experiments. Comprehensive models which predict the transient effects are included in SOISPICE. Simulated transients involving both generation and recombination are fully validated by the experiments and are shown to he useful for reliable carrier lifetime extraction as well as SOI circuit simulation.

[1]  J.G. Fossum,et al.  Transient drain current and propagation delay in SOI CMOS , 1984, IEEE Transactions on Electron Devices.

[2]  S. Cristoloveanu,et al.  Characterization of carrier generation in enhancement-mode SOI MOSFET's , 1990, IEEE Electron Device Letters.

[3]  J. Colinge,et al.  Bulk traps in ultrathin SIMOX MOSFET's by current DLTS , 1988, IEEE Electron Device Letters.

[4]  Dimitris E. Ioannou,et al.  Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET's , 1994 .

[5]  Carrier generation in thin SIMOX films by deep-depletion pulsing of MOS transistors , 1994 .

[6]  Hiroaki Hazama,et al.  Suppression of drain-current overshoot in SOI-MOSFETs using an ultrathin SOI substrate , 1988 .

[7]  Jerry G. Fossum,et al.  A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits , 1995 .

[8]  C. Claeys,et al.  The multistable charge-controlled memory effect in SOI MOS transistors at low temperatures , 1990 .

[9]  K. Kato,et al.  Numerical analysis of switching characteristics in SOI MOSFET's , 1986, IEEE Transactions on Electron Devices.

[10]  S. Li,et al.  Electrical Characterization of Silicon-On-Insulator Materials and Devices , 1995 .

[11]  F. Assaderaghi,et al.  Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs , 1991, IEEE Electron Device Letters.

[12]  Dimitris E. Ioannou,et al.  Deep states in silicon‐on‐insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy , 1988 .

[13]  D. P. Vu,et al.  Determination of minority‐carrier generation lifetime in beam‐recrystallized silicon‐on‐insulator structure by using a depletion‐mode transistor , 1985 .

[14]  M. Racanelli,et al.  Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices , 1996 .

[15]  P.W. Barth,et al.  A dual-gate deep-depletion technique for generation lifetime measurement , 1980, IEEE Transactions on Electron Devices.

[16]  Ying-Che Tseng,et al.  Parasitic bipolar turn-on of PD-SOI MOSFETs in dynamic logic circuits , 1996, 1996 IEEE International SOI Conference Proceedings.