论文信息 - Comparison of measured and simulated characteristics of boron implanted 4H-SiC DiMOSFET

Comparison of measured and simulated characteristics of boron implanted 4H-SiC DiMOSFET

The vertical double implanted MOSFET (DiMOSFET) were fabricated on 4H-SiC(0001) and the device characteristics were investigated. The sheet resistance of the Ni/Ti metals on the P-well region were 41.7kOmega/square and 12.7kOmega/squarefor post ion implantation annealed at 1600degC and 1700degC, respectively. The DiMOSFET device had blocking capability of 980V and the threshold voltage of 0.5V. However abnormal characteristics were observed in the forward characteristics. In this paper, we focused on the narrowing effect of JFET region due to lateral diffusion of implanted boron ions. The structures with narrow or closed JFET at the bottom region showed drain voltage shift

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