论文信息 - Effect of MOSFET parasitic capacitances on EER transmitter with class-E amplifier

Effect of MOSFET parasitic capacitances on EER transmitter with class-E amplifier

This paper presents analytical expressions of the MOSFET-parasitic-capacitance effects on the output envelope of the EER transmitter, taking into account the MOSFET linear gate-to-drain and nonlinear drain-to-source parasitic capacitances in the class-E amplifier. The analysis is useful to predict the behavior of the EER transmitter using the class-E amplifier. It is shown that the envelope of the output voltage is not in proportion to the dc-supply voltage due to the MOSFET-parasitic-capacitance effects. Additionally, the driving voltage waveform affects the output-voltage amplitude and phase shift between the driving voltage and the output voltage.

Hiroo Sekiya | Tomoharu Nagashima | Tadashi Suetsugu | Xiuqin Wei

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