Conduction mechanism of resistance switching in fully transparent MgO-based memory devices

Unipolar resistance switching characteristics are observed in fully transparent indium-doped SnO2/MgO/F-doped SnO2 device. In addition to the transmittance above 90% for visible light, the devices show good endurance and retention characteristics. The resistance-temperature relation curves and the corresponding Arrhenius plot confirm the semiconducting conduction behavior of both the high resistance state and the low resistance state. Experimental results indicate that Ohmic and trap controlled space-charge-limited conduction mechanism controlled the charge carriers transport at the low voltage and high voltage regions, respectively. This work presents a candidate material MgO for the application on the future see-through electronic devices.

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