论文信息 - Source access impedance model for AIGaN/ GaN HEMTs

Source access impedance model for AIGaN/ GaN HEMTs

Thermal noise caused by source parasitic impedance (Rs) is one of the most important noise mechanisms in AlGaN/GaN HEMTs. A physical based frequency dependent Rs model is proposed. This model has been implemented in the PUCEL model for validation purpose, and the results show that the minimum noise figure (Fmin) of an AlGaN/GaN HEMT is not linear but nonlinear against frequency.

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