论文信息 - Investigation of HfO2 Dielectric Stacks Deposited by ALD with a Mercury Probe

Investigation of HfO2 Dielectric Stacks Deposited by ALD with a Mercury Probe

In this paper, a mercury probe is used to characterize electrically HfO2 dielectric stacks. Its effectiveness and limitations are first investigated through C-V measurements analysis. Particularly, an new analytic electrical model is proposed to explain the frequencydependence of C-V characteristics not only due to classical series resistance effects. An application to the study of different HfO2 films is finally presented. It reveals, on as-deposited high-k oxides, the presence of a moderated-κ interfacial layer, which composition can change after post-deposition anneals. The stretch out of C-V curves due to polysilicon deposition and doping activation annealing is also reported .

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