0.18 ㎛ CMOS 기술을 이용한 3-5 ㎓ Noise-Canceling UWB LNA 설계

A 3-5 ㎓ ultra-wideband low-noise amplifier (UWB LNA) using standard 0.18 ㎛ CMOS technology is reported. To achieve high gain and low noise performance, a noise-canceling (NC) technique is adopted to a commom gate (CG) input stage. The UWB LNA dissipates 10.16 mW power and achieves a gain (S21) of 10.04-12.64 ㏈, a noise figure (NF) of 3.3-3.5 ㏈ over a 3-5 ㎓ band of interest. The chip area is only 850 ㎛ × 927 ㎛ including the test pads.