Valence-band structures of layered oxychalcogenides, LaCuOCh (Ch=S, Se, and Te), studied by ultraviolet photoemission spectroscopy and energy-band calculations
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[1] H. Ohta,et al. Optical Properties and Two-Dimensional Electronic Structure in Wide-Gap Layered Oxychalcogenide: La2CdO2Se2 , 2004 .
[2] H. Hosono,et al. Energy band structure of LaCuOCh (Ch = S, Se and Te) calculated by the full-potential linearized augmented plane-wave method , 2004 .
[3] T. Kamiya,et al. Title Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen) , 2004 .
[4] Cheol-hee Park,et al. Gap modulation in MCu[Q1−xQ′x]F (M=Ba, Sr; Q, Q′=S, Se, Te) and related materials , 2003 .
[5] H. Ohta,et al. Electrical and Optical Properties and Electronic Structures of LnCuOS (Ln = La∼Nd) , 2003 .
[6] H. Ohta,et al. Degenerate p-type conductivity in wide-gap LaCuOS1−xSex (x=0–1) epitaxial films , 2003 .
[7] H. Ohta,et al. Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS , 2002 .
[8] H. Hosono,et al. Crystal structure of LaCuOS1−xSex oxychalcogenides , 2002 .
[9] H. Hosono,et al. Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS1−xSex oxychalcogenides , 2002 .
[10] H. Hosono,et al. Electronic Structure of Sr2Cu2ZnO2S2 Layered Oxysulfide with CuS Layers , 2002 .
[11] H. Hosono,et al. Electronic structure of the transparent p -type semiconductor (LaO)CuS , 2001 .
[12] H. Hosono,et al. Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS , 2001 .
[13] H. Hosono,et al. Transparent p-type semiconductor: LaCuOS layered oxysulfide , 2000 .
[14] M. Usuda,et al. Empirical LSDA+U Study for Electronic Structure of Hexagonal NiS , 2000 .
[15] L. Akselrud,et al. New Layered Phases of the MOCuX (M: Ln, Bi; X: S, Se, Te) Family: A Geometric Approach to the Explanation of Phase Stability. , 1999 .
[16] W. J. Zhu,et al. Unusual layered transition-metal oxysulfides : Sr2Cu2MO2S2 (M = Mn, Zn) , 1997 .
[17] R. Hoffmann,et al. Compounds Containing Copper-Sulfur Layers: Electronic Structure, Conductivity, and Stability. , 1996, Inorganic chemistry.
[18] O. Peña,et al. Physical Properties and Electronic Structure of Ternary Barium Copper Sulfides , 1995 .
[19] C. Dong,et al. Synthesis and crystal structure of barium copper fluochalcogenides:[BaCuFQ (Q=S,Se)] , 1994 .
[20] C. Zheng,et al. Donor-acceptor layer formation and lattice site preference in the solid: the CaBe2Ge2 structure , 1986 .
[21] F. Jellinek,et al. The valence of copper in sulphides and selenides: An X-ray photoelectron spectroscopy study , 1980 .
[22] J. Iglesias,et al. The crystal structures and phase transition of α and β BaCu4S3 , 1972 .
[23] H. Hosono,et al. Preparation and crystal structure analysis of CeCuOS , 2003 .
[24] J. Yeh,et al. Atomic calculation of photoionization cross-sections and asymmetry parameters , 1993 .
[25] W. Stickle,et al. Handbook of X-Ray Photoelectron Spectroscopy , 1992 .