A 6GHz ECL frequency divider using sidewall base contact structure
暂无分享,去创建一个
A report on the use of 6GHz ECL and 580MHz IIL flip-flops with 45mW and 9mW dissipation, integrated simultaneously with the sidewall base structure technology, will be presented.
[1] A. Shibatomi,et al. High electron mobility transistors for LSI circuits , 1983, 1983 International Electron Devices Meeting.
[2] Tadashi Sakai,et al. Gigabit logic bipolar technology: advanced super self-aligned process technology , 1983 .
[3] M. Nagata,et al. Self-aligned transistor with sidewall base electrode , 1982, 1981 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.