论文信息 - The inverse-narrow-width effect

The inverse-narrow-width effect

For the first time an analytical expression can simulate the inverse-narrow-width effect. The inverse-narrow-width effect is a reduction in the threshold voltage of a MOSFET with decreasing channel width. We compare the model with experimental threshold voltage data from small-geometry PMOS devices with fully recessed isolation oxides and an inverse-narrow-width effect is predicted.

L. Akers | L.A. Akers

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