论文信息 - Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling - 字舞流文

Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling

A. Piotrowska | M. Guziewicz | A. Taube | R. Kruszka | K. Gołaszewska-Malec | R. Jakieła | K. Pągowska | M. Kozubal