Impact of planar microcavity effects on light extraction-Part II: selected exact simulations and role of photon recycling
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[1] T. Ishihara,et al. ENHANCED TRANSFER EFFICIENCY IN ALGAAS ASYMMETRIC PLANAR MICROCAVITIES , 1994 .
[2] W. J. Choyke,et al. Below‐band‐gap photon recycling in AlxGa1−xAs , 1989 .
[3] Uziel Koren,et al. Photonic Integrated Circuits , 1989 .
[4] R. Silbey,et al. Fluorescence and energy transfer near interfaces: The complete and quantitative description of the Eu+3/mirror systems , 1975 .
[5] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[6] C. Henry,et al. Determination of the refractive index of InGaAsP epitaxial layers by mode line luminescence spectroscopy , 1985 .
[7] Uziel Koren,et al. Photonic integrated circuits , 1990, AT&T Technical Journal.
[8] N. Magnea,et al. II-VI Resonant Cavity Light Emitting Diodes for the Mid-Infrared , 1996 .
[9] Yihong Wu,et al. Structure-dependent threshold current density for CdZnSe-based II-VI semiconductor lasers , 1994 .
[10] R. A. Logan,et al. High Efficiency, Narrow Spectrum Resonant Cavity Light Emitting Diodes , 1995 .
[11] K. Neyts. Cavity Effects in Thin Film Phosphors Based on Zns , 1996 .
[12] Shuji Nakamura,et al. III–V nitride based light-emitting devices , 1997 .
[13] Piet Demeester,et al. 16% external quantum efficiency from planar microcavity LEDs at 940nm by precise matching of cavity wavelength , 1995 .
[14] J. Hegarty,et al. GROWTH AND CHARACTERIZATION OF AN EPITAXIALLY GROWN ZNSSE/MNZNSSE DISTRIBUTED BRAGG REFLECTOR , 1995 .
[15] F. A. Kish,et al. Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers , 1996 .
[16] M. George Craford,et al. Chapter 2 Overview of Device Issues in High-Brightness Light-Emitting Diodes , 1997 .
[17] C. Weisbuch,et al. Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends , 1998 .
[18] Dennis G. Deppe,et al. Spontaneous emission from a dipole in a semiconductor microcavity , 1991 .
[19] W. Trimble Road. COMMERCIAL LIGHT EMITTING DIODE TECHNOLOGY: Status, Trends, and Possible Future Performance , 1996 .
[20] Eli Yablonovitch,et al. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures , 1993 .
[21] P. Demeester,et al. High efficiency planar microcavity LED's: comparison of design and experiment , 1995, IEEE Photonics Technology Letters.
[22] H. Morkoç,et al. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies , 1994 .
[23] Piet Demeester,et al. High efficiency (>20%) microcavity LEDs , 1996 .
[24] Frank M. Steranka,et al. Chapter 3 AlGaAs Red Light-Emitting Diodes , 1997 .
[25] R. Powell,et al. Refractive indices of zincblende structure β‐GaN(001) in the subband‐gap region (0.7–3.3 eV) , 1996 .
[26] Joel N. Schulman,et al. Wave Mechanics Applied to Semiconductor Heterostructures , 1991 .
[27] Piet Demeester,et al. Recycling of guided mode light emission in planar microcavity light emitting diodes , 1997 .
[28] C. P. Kuo,et al. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes , 1994 .
[29] Gustaaf Borghs,et al. Planar substrate-emitting-microcavity light-emitting diodes with 20% external QE , 1997, Photonics West.
[30] Hadis Morkoç,et al. Emerging gallium nitride based devices , 1995, Proc. IEEE.
[31] A. L. Bradley,et al. Epitaxial lift‐off of ZnSe based II–VI structures , 1995 .
[32] W. Lukosz,et al. Theory of optical-environment-dependent spontaneous-emission rates for emitters in thin layers , 1980 .
[33] H. Benisty,et al. Method of source terms for dipole emission modification in modes of arbitrary planar structures , 1998 .
[34] Y. Kadoya,et al. Influence of photon reabsorption on the transfer efficiency of output intensity in semiconductor microcavities , 1997, IEEE Photonics Technology Letters.
[35] Piet Demeester,et al. 6% external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs , 1994 .
[36] G. W. Ford,et al. Electromagnetic interactions of molecules with metal surfaces , 1984 .
[37] E. Schubert,et al. Temperature and modulation characteristics of resonant-cavity light-emitting diodes , 1996 .
[38] Machida,et al. Modification of spontaneous emission rate in planar dielectric microcavity structures. , 1991, Physical review. A, Atomic, molecular, and optical physics.
[39] D. E. Gray,et al. American Institute of Physics Handbook , 1957 .
[40] Chapter 15 – PHOTONIC INTEGRATED CIRCUITS , 1995 .
[41] A. Kastler,et al. Atomes à I’Intérieur d’un Interféromètre Perot-Fabry , 1962 .
[42] R. Moon. MOVPE: is there any other technology for optoelectronics? , 1997 .
[43] M. Craford. Commercial Light Emitting Diode Technology , 1996 .
[44] W. Lukosz. Light emission by magnetic and electric dipoles close to a plane dielectric interface. III. Radiation patterns of dipoles with arbitrary orientation , 1979 .
[45] S. Adachi. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .
[46] R. A. Logan,et al. Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant‐cavity light‐emitting diode , 1992 .
[47] F. A. Kish,et al. Chapter 5 AlGalnP Light-Emitting Diodes , 1997 .
[48] P. C. Becker,et al. Spontaneous Emission Control in Planar Structures: Er3+ IN Si/SiO2 Microcavities , 1995 .
[49] Isamu Akasaki,et al. High‐quality GaInN/GaN multiple quantum wells , 1996 .
[50] S. Ho,et al. Spontaneous emission from excitons in thin dielectric layers. , 1993, Optics letters.