Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs

The impact of narrow-width effects on high-frequency performance like <i>fT</i>, <i>f</i><sub>MAX</sub>, and RF noise parameters, such as <i>NF</i><sub>min</sub> and <i>Rn</i>, in sub-40-nm multifinger CMOS devices is investigated in this paper. Narrow-oxide-diffusion (OD) MOSFET with smaller finger width and larger finger number can achieve lower <i>Rg</i> and higher <i>f</i><sub>MAX</sub>. However, these narrow-OD devices suffer <i>fT</i> degradation and higher <i>NF</i><sub>min</sub>, even with the advantage of lower <i>Rg</i>. The mechanisms responsible for the tradeoff between different parameters will be presented to provide an important guideline of multifinger MOSFET layout for RF circuit design using nanoscale CMOS technology.

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