论文信息 - Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy - 字舞流文

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

E. Monroy | F. Calle | D. Basak | A. Sanz-Hervás | M. Sánchez-García | E. Calleja | E. Muñoz | M. Aguilar | J. Serrano | J. Blanco | C. Villar | F. Sanchez