论文信息 - Hole Trapping, Recombination and Space Charge in Irradiated Sandia Oxides

Hole Trapping, Recombination and Space Charge in Irradiated Sandia Oxides

A computer model for calculating radiation effects in MOS oxides is presented. Good agreement is obtained between theory and photoconductivity experiments (photo-current and flat band shift as a function of total dose) on Sandia radiation hard oxides. It is also shown that doses above 108 rads (delivered by a focused electron beam) are required to produce a significant number of new defect traps.

R. C. Hughes | C. H. Seager | C. Seager

[1] Robert W. Dutton,et al. On models of phosphorus diffusion in silicon , 1983 .

[2] Patrick M. Lenahan,et al. An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface , 1983 .

[3] R. C. Hughes,et al. Numerical analysis of transient photoconductivity in insulators , 1982 .

[4] H. E. Boesch,et al. Annealing of MOS Capacitors with Implications for Test Procedures to Determine Radiation Hardness , 1981, IEEE Transactions on Nuclear Science.

[5] R. C. Hughes,et al. Computation of photoconductivity in insulators in the space charge and recombination regime: Application to PbO films , 1981 .

[6] F. B. McLean. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures , 1980, IEEE Transactions on Nuclear Science.

[7] R. C. Hughes. Time-resolved hole transport in a-SiO/sub 2/ , 1977 .

[8] T. E. Everhart,et al. Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials , 1971 .

[9] T. Collins,et al. Modeling of Irradiation-Induced Changes in the Electrical Properties of Metal-Oxide-Semiconductor Structures , 1982 .

[10] J. R. Srour,et al. ELECTRON TRANSPORT IN SiO2 FILMS AT LOW TEMPERATURES , 1980 .

[11] R. C. Hughes. High field electronic properties of SiO2 , 1978 .