Flash memory apparatus for multilevel and singlelevel program/read

PURPOSE: A flash memory compatible for programming and a reading multi level and a single level is provided to selectively utilize as a multi bit or a single bit flash memory in response to the specification of the system by utilizing the multi level when the capacity of the memory is large enough and by utilizing the single level when the memory program/read speed is relatively high. CONSTITUTION: A flash memory compatible for programming and a reading multi level and a single level includes a high voltage generation block(2) for generating a voltage required for programming/reading the flash memory, a first data buffer block(3), a second data buffer block(4), a sense amplifier block(5) controlled by a program/read control sequence block(1) for outputting the current values of the cell to the first and the second data buffer blocks(3,4) by converting the current values as a bit data, a column decoder and driver block(6) for selecting a column line of the flash memory array block(8) by the row address signal through receiving the voltage from the high voltage generation block(2), a row decoder and driver block(7) for selecting a row line of the flash memory array block(8) by a row address signal by receiving the voltage from the high voltage generation block(2) and the program/read control sequence block(1) for controlling the operations of the high voltage generation block(2), the first and the second data buffer blocks(3,4), the sense amplifier block(5), the column decoder and driver block(6) and the row decoder and driver block(7), respectively.