论文信息 - Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application - 字舞流文

Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application

Tianchun Ye | Q. Liang | H. Maynard | Jinbiao Liu | Junfeng Li | Huilong Zhu | Chao Zhao | Dapeng Chen | W. Zou | Gaobo Xu | Xiaolei Wang | J. Xiang | Qiuxia Xu | Shan Tang | D. Raj | S. Salimian | G. Tao | Yao Wang