Performance Limits and Potential of Multilayer Graphene–Tungsten Diselenide Heterostructures

Atomically thin tungsten diselenide (WSe2) transistors with multilayer graphene (w/ G) as contact electrodes are successfully fabricated by a precise area‐controllable chemical vapor deposition method. The performance and electrical properties of the devices are explored. Compared to those of WSe2 transistors without graphene contacts (w/o G), the maximum current densities of the w/ G–WSe2 transistors increase by one to two orders of magnitude. In addition, the device performance is markedly improved for the w/ G–WSe2 transistors, including an on/off current ratio of ≈107, subthreshold swing of ≈150 mV/decade, and threshold voltage of ≈1.75 V. The improved performance of the w/ G–WSe2 transistors is ascribed to the alleviation of electrical contributions from metal–semiconductor contact resistance, which is consistent with the analysis of low‐frequency noise measurements. In addition, self‐trapping behavior in the WSe2 channel is found, which possibly paves a way to further optimize the performance of layered devices. Finally, an inverter using the w/ G–WSe2 transistors is demonstrated. These transistors represent a step forward in the development of layered graphene‐based electronics suitable for energy‐efficient and high‐performance industrial‐scale products.

[1]  Z. Komeily-Nia,et al.  Progress in the Understanding and Applications of the Intrinsic Reactivity of Graphene‐Based Materials , 2020, Small Science.

[2]  Feng Wang,et al.  Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures , 2020, Nature Electronics.

[3]  P. Chiu,et al.  Graphene-Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits. , 2020, ACS nano.

[4]  Eric Pop,et al.  Contact Engineering High Performance n-Type MoTe2 Transistors. , 2019, Nano letters.

[5]  Kenji Watanabe,et al.  Transferred via contacts as a platform for ideal two-dimensional transistors , 2019, Nature Electronics.

[6]  Kenji Watanabe,et al.  Gate‐Tunable Graphene–WSe2 Heterojunctions at the Schottky–Mott Limit , 2019, Advanced materials.

[7]  C. Lien,et al.  Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors , 2019, Advanced Functional Materials.

[8]  Jie Shan,et al.  Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures , 2019, Nature Electronics.

[9]  H. Jeong,et al.  Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors , 2019, Nature.

[10]  J. Choi,et al.  Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide , 2018, Advanced materials.

[11]  Yu Huang,et al.  Solution-processable 2D semiconductors for high-performance large-area electronics , 2018, Nature.

[12]  C. Lien,et al.  High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping , 2018, Advanced materials.

[13]  D. Smirnov,et al.  Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2 , 2018, Nature Communications.

[14]  Zhenxing Wang,et al.  High-performance, multifunctional devices based on asymmetric van der Waals heterostructures , 2018, Nature Electronics.

[15]  X. Duan,et al.  Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions , 2018, Nature.

[16]  Chunsen Liu,et al.  A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications , 2018, Nature Nanotechnology.

[17]  Kazuhito Tsukagoshi,et al.  Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping , 2018, Advanced materials.

[18]  C. Lien,et al.  Multilayer Graphene-WSe2 Heterostructures for WSe2 Transistors. , 2017, ACS nano.

[19]  Yanqing Wu,et al.  Multifunctional high-performance van der Waals heterostructures. , 2017, Nature nanotechnology.

[20]  Zhi-Xun Shen,et al.  HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides , 2017, Science Advances.

[21]  P. Kim,et al.  Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes. , 2017, Nano letters.

[22]  P. Ajayan,et al.  Two-dimensional non-volatile programmable p-n junctions. , 2017, Nature nanotechnology.

[23]  D. Muller,et al.  Large-scale chemical assembly of atomically thin transistors and circuits. , 2016, Nature nanotechnology.

[24]  Zhigao Hu,et al.  The impact of electrical contacts and contact-induced ultralow noise amplitudes in layered transistors , 2016 .

[25]  Zhiyong Fan,et al.  High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer , 2016, Advanced materials.

[26]  K. Novoselov,et al.  High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. , 2016, Nature nanotechnology.

[27]  S. Banerjee,et al.  Improved contact resistance in ReSe2 thin film field-effect transistors , 2016 .

[28]  H. Jang,et al.  Current fluctuation of electron and hole carriers in multilayer WSe2 field effect transistors , 2015 .

[29]  Kai Xu,et al.  Ultrasensitive Phototransistors Based on Few‐Layered HfS2 , 2015, Advanced materials.

[30]  Kaustav Banerjee,et al.  Electrical contacts to two-dimensional semiconductors. , 2015, Nature materials.

[31]  K. Tsukagoshi,et al.  Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors , 2015, Advanced materials.

[32]  Wei Jiang,et al.  Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors , 2015, Nature Communications.

[33]  P. Ye,et al.  Performance Potential and Limit of MoS2 Transistors , 2015, Advanced materials.

[34]  Jong-Ho Lee,et al.  Low frequency noise characteristics in multilayer WSe2 field effect transistor , 2015 .

[35]  Qiyuan He,et al.  Toward barrier free contact to molybdenum disulfide using graphene electrodes. , 2014, Nano letters.

[36]  Giuseppe Iannaccone,et al.  Electronics based on two-dimensional materials. , 2014, Nature nanotechnology.

[37]  R. Wallace,et al.  The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. , 2014, Nano letters.

[38]  Madan Dubey,et al.  Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics. , 2014, Nano letters.

[39]  K. L. Shepard,et al.  One-Dimensional Electrical Contact to a Two-Dimensional Material , 2013, Science.

[40]  Tobin J Marks,et al.  Low-frequency electronic noise in single-layer MoS2 transistors. , 2013, Nano letters.

[41]  SUPARNA DUTTASINHA,et al.  Van der Waals heterostructures , 2013, Nature.

[42]  H. Wen,et al.  Control of Schottky barriers in single layer MoS2 transistors with ferromagnetic contacts. , 2013, Nano letters.

[43]  Wei Liu,et al.  Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. , 2013, Nano letters.

[44]  J. Appenzeller,et al.  High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.

[45]  Yu Huang,et al.  Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters , 2012, Nature materials.

[46]  J. Tersoff,et al.  Structure and electronic transport in graphene wrinkles. , 2012, Nano letters.

[47]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[48]  Kwang S. Kim,et al.  Large-scale pattern growth of graphene films for stretchable transparent electrodes , 2009, Nature.

[49]  Kang Hyun Kim,et al.  Noise characteristics of single-walled carbon nanotube network transistors , 2008, Nanotechnology.

[50]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[51]  M. Shur,et al.  1/f noise in pentacene organic thin film transistors , 2000 .

[52]  Gerard Ghibaudo,et al.  Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .

[53]  Gerard Ghibaudo,et al.  New method for the extraction of MOSFET parameters , 1988 .

[54]  B. Lee,et al.  Contact Resistance Reduction of WS2 FETs Using High-Pressure Hydrogen Annealing , 2018, IEEE Journal of the Electron Devices Society.

[55]  F. Schwierz.  Graphene transistors. , 2010, Nature nanotechnology.