论文信息 - Annealing Properties of Defects in B+- and F+-Implanted Si Studied Using Monoenergetic Positron Beams - 字舞流文

Annealing Properties of Defects in B+- and F+-Implanted Si Studied Using Monoenergetic Positron Beams

A. Uedono | T. Ohdaira | R. Suzuki | T. Kitano | T. Moriya | K. Hamada | S. Tanigawa | T. Mikado | T. Kawano