High performance silicon bipolar power amplifier for 1.8 GHz applications

The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers has been explored. To this end, a unit power cell has been developed by optimizing layout design, collector thickness and doping level. On-wafer load-pull measurements were performed which showed an excellent power-added efficiency of 83% at 1.8 GHz under a supply voltage of 2.7 V. The optimized unit power cell was employed to implement a 1.8 GHz three-stage monolithic power amplifier. The device achieved a 57% maximum power-added efficiency and 33-dB gain at a 34-dBm output power level while operating at 2.7 V.

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