Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

Epitaxial GaN films were grown by metal organic chemical vapor deposition (MOCVD) on functionalized epitaxial graphene (EG) using a thin (~11 nm) conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cm-1 after GaN growth. X-ray diffraction analysis reveals [0001]-oriented hexagonal GaN with (0002) peak rocking curve full width at the half maximum (FWHM) of 544 arcsec. The FWHM values are similar to reported values for GaN grown by MOCVD on sapphire. The GaN layer has a strong room-temperature photoluminescence band edge emission. Successful demonstration of GaN growth on EG opens up the possibility of III–nitride/graphene heterostructure-based electronic devices and promises improved performance.

[1]  V. Wheeler,et al.  Epitaxial graphene surface preparation for atomic layer deposition of Al2O3 , 2011 .

[2]  M. Khan,et al.  Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates , 1993 .

[3]  V. Wheeler,et al.  Graphene functionalization and seeding for dielectric deposition and device integration , 2012 .

[4]  Charles R. Eddy,et al.  Graphene Formation on SiC Substrates , 2009 .

[5]  J. E. Crombeen,et al.  LEED and Auger electron observations of the SiC(0001) surface , 1975 .

[6]  Hui Yang,et al.  Self-adaptive electronic contact between graphene and semiconductors , 2012 .

[7]  G. Yi,et al.  Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices , 2010, Science.

[8]  M. Khan,et al.  Fundamental optical transitions in GaN , 1996 .

[9]  J. Scheytt,et al.  Vertical Graphene Base Transistor , 2011, IEEE Electron Device Letters.

[10]  T. Fukunaga,et al.  On the so-called “semi-ionic” C–F bond character in fluorine–GIC , 2004 .

[11]  Hongxing Jiang,et al.  Photoluminescence studies of impurity transitions in AlGaN alloys , 2006 .

[12]  F. G. McIntosh,et al.  Growth and characterization of In-based nitride compounds , 1997 .

[13]  Charles R. Eddy,et al.  Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics , 2012 .

[14]  M. Tonouchi,et al.  Superconductor-Base Hot-Electron Transistor I. Theory and Design , 1986 .

[15]  L. Wernersson,et al.  InP Hot Electron Transistors with a Buried Metal Gate , 2003 .

[16]  S. George Atomic layer deposition: an overview. , 2010, Chemical reviews.