Surface micromachined pressure transducers

Abstract Typical IC processing is fundamentally two dimensional; sensors are three-dimensional structures. In surface micromachining, two-dimensional IC processing is extended to sensor structures by the addition of one or more sacrificial layers which are removed by lateral etching. The resulting sensor structures involve the substrate and one or more deposited films which form the intended micromechanical component. The concepts of this type of sensor manufacturing are readily demonstrated by considering absolute pressure transducers in some detail. Absolute pressure transducers involve a vacuum-sealed cavity and a deformation sensing technique. The cavity is formed from the substrate and a low-pressure chemical vapor deposited polycrystalline silicon film. The mechanical properties of this film must be controlled well enough to allow the device to be designed. This implies morphological control during processing. Optimized films which do exhibit controlled compressive or tensile strains exclude oxygen or nitrogen and are therefore not modified by extended hydrofluoric acid etches. Their mechanical behavior is monitored by micromechanical test structures which measure Euler buckling and thereby determine the value of the built-in strain. The cavity vacuum is established by reactive sealing. Long-term vacuum integrity is achieved by a low-stress silicon nitride barrier which also acts as a dielectric isolation barrier. Sensing is accomplished via deposited polysilicon resistors. These devices behave like metal resistors in terms of their temperature coefficient of resistance and noise figure. Their piezoresistive behavior is larger than that of typical metal film structures and smaller than that of single-crystal resistors. Pressure sensors with four diaphragms, two active and two inactive, have been constructed and optimized towards manufacturability. The measured performance is excellent and agrees with the predictions of the design algorithm.

[2]  W.H. Ko,et al.  A high-sensitivity integrated-circuit capacitive pressure transducer , 1982, IEEE Transactions on Electron Devices.

[3]  A. R. Zias,et al.  Solid-state digital pressure transducer , 1969 .

[4]  D. W. Burns,et al.  Fine-grained polysilicon films with built-in tensile strain , 1988 .

[5]  Susumu Sugiyama,et al.  Integrated piezoresistive pressure sensor with both voltage and frequency output , 1983 .

[6]  J. Seto Piezoresistive properties of polycrystalline silicon , 1976 .

[7]  M. Esashi,et al.  Fabrication of catheter-tip and sidewall miniature pressure sensors , 1982, IEEE Transactions on Electron Devices.

[8]  D. W. Burns,et al.  Mechanical properties of fine grained polysilicon-the repeatability issue , 1988, IEEE Technical Digest on Solid-State Sensor and Actuator Workshop.

[9]  R.S. Muller,et al.  Integrated resonant-microbridge vapor sensor , 1984, 1984 International Electron Devices Meeting.

[10]  S. Sugiyama,et al.  Micro-diaphragm pressure sensor , 1986, 1986 International Electron Devices Meeting.

[11]  W. H. Ko,et al.  Miniature capacitive pressure transducers , 1981 .

[12]  M. Esashi,et al.  Biomedical pressure sensor using buried piezoresistors , 1983 .

[13]  Akio Yasukawa,et al.  A special silicon diaphragm pressure sensor with high output and high accuracy , 1981 .

[14]  K. Wise,et al.  A batch-fabricated silicon capacitive pressure transducer with low temperature sensitivity , 1982, IEEE Transactions on Electron Devices.

[15]  O. Tabata,et al.  Mechanical property measurements of thin films using load-deflection of composite rectangular membranes , 1989 .

[16]  R. Howe,et al.  Resonant-microbridge vapor sensor , 1986, IEEE Transactions on Electron Devices.

[17]  J. Meindl,et al.  A monolithic capacitive pressure sensor with pulse-period output , 1980, 1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[18]  Yamada Kazuji,et al.  A piezoresistive integrated pressure sensor , 1983 .

[19]  Wen H. Ko,et al.  Capacitive pressure transducers with integrated circuits , 1983 .

[20]  D. W. Burns,et al.  DEPOSITION TECHNIQUES AND PROPERTIES OF STRAIN COMPENSATED LPCVD SILICON NITRIDE FILMS , 1986 .

[21]  Farshid Raissi,et al.  The application of fine-grained, tensile polysilicon to mechanicaly resonant transducers , 1990 .

[22]  M. Konagai,et al.  Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase silicon films and applications to power sensors and strain gauges , 1984 .

[23]  Henry Guckel,et al.  Performance characteristics of second generation polysilicon resonating beam force transducers , 1990, IEEE 4th Technical Digest on Solid-State Sensor and Actuator Workshop.

[24]  R. Howe,et al.  Polycrystalline Silicon Micromechanical Beams , 1983 .

[25]  K. Sekiya,et al.  Piezoresistive Properties of Polycrystalline Silicon Thin Film , 1972 .

[26]  O. Dössel Longitudinal and transverse gauge factors of polycrystalline strain gauges , 1984 .

[27]  W. Ko,et al.  Development of a miniature pressure transducer for biomedical applications , 1979, IEEE Transactions on Electron Devices.

[28]  Krishna C. Saraswat,et al.  Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon Films , 1978 .

[29]  D. W. Burns,et al.  A simple technique for the determination of mechanical strain in thin films with applications to polysilicon , 1985 .