Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

Strained‐layer Ga0.7In0.3As‐AlGaAs‐GaAs graded‐index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained‐layer lasers grown by molecular beam epitaxy and lower than those for strained‐layer lasers grown by organometallic vapor phase epitaxy.

[1]  G. A. Vawter,et al.  Record low-threshold, single-strained-quantum-well, graded-index, separate-confinement heterostructure laser , 1989 .

[2]  Lester F. Eastman,et al.  Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition , 1986 .

[3]  L. Eastman,et al.  Effects of substrate misorientation and background impurities on electron transport in molecular‐beam‐epitaxial‐grown GaAs/AlGaAs modulation‐doped quantum‐well structures , 1987 .

[4]  Amnon Yariv,et al.  Scaling laws and minimum threshold currents for quantum-confined semiconductor lasers , 1988 .

[5]  S. Fischer,et al.  Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm) , 1987 .

[6]  Eli Yablonovitch,et al.  Reduction of lasing threshold current density by the lowering of valence band effective mass , 1986 .

[7]  Effect of strain on the band structure of GaAs and In0.2Ga0.8As , 1988 .

[8]  P. J. Caldwell,et al.  Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers , 1985 .

[9]  L. A. Coldren,et al.  Extremely wide modulation bandwidth in a low threshold current strained quantum well laser , 1988 .

[10]  A. R. Adams,et al.  Band-structure engineering for low-threshold high-efficiency semiconductor lasers , 1986 .

[11]  L. Eastman,et al.  Superlattice buffers for GaAs power MESFET’s grown by MBE , 1984 .

[12]  D. Bour,et al.  Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser , 1988 .

[13]  L. Eastman,et al.  Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular‐beam epitaxial growth of InGaAs single quantum wells on GaAs , 1989 .

[14]  N. Sugiyama,et al.  Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers , 1988 .

[15]  Yasuhiko Arakawa,et al.  Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers , 1985 .

[16]  R. M. Kolbas,et al.  Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers , 1988 .

[17]  E. Kane,et al.  Correction to "Reduction of lasing threshold current density by the lowering of valence band effective mass" , 1986 .