The dynamic gradient freeze growth of InP

III-V bulk crystal growth in a low temperature gradient environment results in low defect levels and improved material homogeneity, important for optoelectronic devices and integrated circuit applications. In this report, the design of a novel, 23 zone, high pressure, vertical furnace for the dynamic gradient freeze (DGF) growth of InP is described, which allows one to establish the wide range of thermal profiles necessary to achieve a basic understanding of growth-property relationships. Undoped, 〈111〉 seeded, 50 mm diameter InP single crystals have been grown with dislocation densities in the range of 102–103/cm2. The material was found to be n-type with 77 K carrier concentrations of 3×1015/cm3, and mobilities exceeding 38,000 cm2/V·s at 77 K. These parameters are considerable improvements over conventional undoped LEC InP.