An ultra-wideband, hybrid, distributed power amplifier using flip-chip bonded GaN devices on AlN substrate
暂无分享,去创建一个
John Papapolymerou | A. Cagri Ulusoy | Spyridon Pavlidis | Wasif T. Khan | J. Papapolymerou | A. Ulusoy | Christopher Barisich | S. Pavlidis | W. Khan | Christopher Barisich
[1] J. Papapolymerou,et al. A feasibility study of flip-chip packaged gallium nitride HEMTs on organic substrates for wideband RF amplifier applications , 2014, 2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
[2] P. Chao,et al. Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology , 2011, 2011 IEEE MTT-S International Microwave Symposium.
[3] W.R. Hewlett,et al. Distributed Amplification , 1948, Proceedings of the IRE.
[4] Robert A. York,et al. A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier , 2000 .
[5] Christer M. Andersson,et al. Decade bandwidth high efficiency GaN HEMT power amplifier designed with resistive harmonic loading , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.
[6] M. Seelmann-Eggebert,et al. GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz , 2010, The 40th European Microwave Conference.
[7] J. Papapolymerou,et al. A low-cost, encapsulated flip-chip package on organic substrate for wideband gallium nitride (GaN) hybrid amplifiers , 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).
[8] Song Lin,et al. Ultra wideband high gain GaN power amplifier , 2010, 2010 IEEE Radio and Wireless Symposium (RWS).