Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices
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[1] Dennis B. Brown,et al. Time dependence of interface trap formation in MOSFETs following pulsed irradiation , 1988 .
[2] J. Boesch,et al. Time-dependent interface trap effects in MOS devices , 1988 .
[3] S. Lai,et al. Interface trap generation in silicon dioxide when electrons are captured by trapped holes , 1983 .
[4] H. E. Boesch,et al. Application of stochastic hopping transport to hole conduction in amorphous SiO2 , 1976 .
[5] Chih-Tang Sah,et al. Field dependence of two large hole capture cross sections in thermal oxide on silicon , 1983 .
[6] Daniel M. Fleetwood,et al. Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices , 1988 .
[7] C. Hawkins,et al. The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices , 1985, IEEE Transactions on Nuclear Science.
[8] R. C. Hughes. Hole mobility and transport in thin SiO2 films , 1975 .
[9] H. E. Boesch,et al. Reversibility of trapped hole annealing , 1988 .
[10] P. S. Winokur,et al. An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors , 1987, IEEE Transactions on Nuclear Science.
[11] Patrick M. Lenahan,et al. The Nature of the Deep Hole Trap in MOS Oxides , 1987, IEEE Transactions on Nuclear Science.
[12] Enhanced Flatband Voltage Recovery in Hardened Thin MOS Capacitors , 1978, IEEE Transactions on Nuclear Science.
[13] H. E. Boesch,et al. The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices , 1986, IEEE Transactions on Nuclear Science.
[14] P. S. Winokur,et al. Physical Mechanisms Contributing to Device "Rebound" , 1984, IEEE Transactions on Nuclear Science.
[15] Patrick M. Lenahan,et al. Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates , 1988 .
[16] J. M. Soden,et al. The Effects of Test Conditions on MOS Radiation-Hardness Results , 1981, IEEE Transactions on Nuclear Science.
[17] P. S. Winokur,et al. Two‐stage process for buildup of radiation‐induced interface states , 1979 .
[18] Daniel M. Fleetwood. Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices , 1989 .
[19] D. B. Brown,et al. Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent Biases , 1987, IEEE Transactions on Nuclear Science.
[20] B. D. Shafer,et al. Room Temperature Annealing of Ionizatton-Induced Damage in CMOS Circuits , 1973 .
[21] P. S. Winokur,et al. Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.
[22] P. Winokur,et al. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .
[23] Tak H. Ning,et al. High‐field capture of electrons by Coulomb‐attractive centers in silicon dioxide , 1976 .
[24] J. R. Srour,et al. Leakage Current Phenomena in Irradiated SOS Devices , 1977, IEEE Transactions on Nuclear Science.
[25] David L. Griscom,et al. Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures , 1985 .
[26] T. P. Ma,et al. Ionizing radiation effects in MOS devices and circuits , 1989 .
[27] G. F. Derbenwick,et al. Vacuum Ultraviolet Radiation Effects in SiO2 , 1971 .