Design and Analysis of a Fully-Integrated Resonant Gate Driver

[1]  M.A. Khan,et al.  Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors , 1996, IEEE Electron Device Letters.

[2]  M. Bathily,et al.  A 200-MHz Integrated Buck Converter With Resonant Gate Drivers for an RF Power Amplifier , 2012, IEEE Transactions on Power Electronics.

[3]  W. Eberle,et al.  A novel high performance resonant gate drive circuit with low circulating current , 2006, Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06..

[4]  Dragan Maksimovic,et al.  A MOS gate drive with resonant transitions , 1991, PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference.

[5]  Fred C. Lee,et al.  A resonant MOSFET gate driver with complete energy recovery , 2000, Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435).

[6]  B. Allard,et al.  Design Flow for High Switching Frequency and Large-Bandwidth Analog DC/DC Step-Down Converters for a Polar Transmitter , 2012, IEEE Transactions on Power Electronics.

[7]  Bo Wang Wide bandwidth control electronics for GaN-based PEBBs , 2009 .

[8]  Yuhui Chen,et al.  Resonant Gate Drive Techniques for Power MOSFETs , 2004 .

[9]  R. Dingle,et al.  Electron mobilities in modulation‐doped semiconductor heterojunction superlattices , 1978 .

[10]  R. Jacob Baker,et al.  CMOS Circuit Design, Layout, and Simulation , 1997 .

[11]  W. Eberle,et al.  A Current Source Gate Driver Achieving Switching Loss Savings and Gate Energy Recovery at 1-MHz , 2008, IEEE Transactions on Power Electronics.

[12]  O. Madelung Semiconductors: Data Handbook , 2003 .

[13]  Fred Wang,et al.  A 10-MHz resonant gate driver design for LLC resonant DC-DC converters using GaN devices , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

[14]  Hideaki Fujita A Resonant Gate-Drive Circuit With Optically Isolated Control Signal and Power Supply for Fast-Switching and High-Voltage Power Semiconductor Devices , 2013, IEEE Transactions on Power Electronics.

[15]  W. Eberle,et al.  A High Efficiency Synchronous Buck VRM with Current Source Gate Driver , 2007, 2007 IEEE Power Electronics Specialists Conference.

[16]  Masayuki Abe,et al.  High Electron Mobility Transistor Logic , 1981 .

[17]  Yan-Fei Liu,et al.  A new resonant gate drive circuit with efficient energy recovery and low conduction loss , 2008, 31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005..

[18]  Khai D. T. Ngo Generalization of resonant switches and quasi-resonant DC-DC converters , 1987, IEEE Power Electronics Specialists Conference.

[19]  Bruno Allard,et al.  Resonant gate drive for silicon integrated DC/DC converters , 2009, 2009 IEEE Energy Conversion Congress and Exposition.

[20]  A. Monti,et al.  An Efficient High-Frequency Drive Circuit for GaN Power HFETs , 2009, IEEE Transactions on Industry Applications.

[21]  T. Mimura,et al.  The early history of the high electron mobility transistor (HEMT) , 2002 .

[22]  Hideaki Fujita A Resonant Gate-Drive Circuit Capable of High-Frequency and High-Efficiency Operation , 2010 .

[23]  I. D. de Vries,et al.  A resonant power MOSFET/IGBT gate driver , 2002, APEC 2002.

[24]  Hideaki Fujita,et al.  A resonant gate-drive circuit with optically-isolated control signal and power supply for fast-switching and high-voltage power semiconductor devices , 2013, The 2010 International Power Electronics Conference - ECCE ASIA -.

[25]  H. Ishida,et al.  Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation , 2007, IEEE Transactions on Electron Devices.

[26]  F.C. Lee,et al.  A resonant MOSFET gate driver with efficient energy recovery , 2004, IEEE Transactions on Power Electronics.

[27]  Dieter Fuhrmann,et al.  Logical Effort Designing Fast Cmos Circuits , 2016 .

[28]  J. Glaser,et al.  GaN Transistors for Efficient Power Conversion , 2019 .

[29]  S. Montanari Fabrication and characterization of planar Gunn diodes for Monolithic Microwave Integrated Circuits , 2005 .

[30]  W. Eberle,et al.  A Resonant Gate Drive Circuit with Reduced MOSFET Switching and Gate Losses , 2006, IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics.

[31]  W. Sommer Liquid Helium as a Barrier to Electrons , 1964 .

[32]  Joan M. Redwing,et al.  AlGaN/GaN HEMTs grown on SiC substrates , 1997 .

[33]  Antonello Monti,et al.  Integrated circuit implementation for a GaN HFETs driver circuit , 2008 .

[34]  David Harris,et al.  CMOS VLSI Design: A Circuits and Systems Perspective , 2004 .

[35]  V. Adler,et al.  Delay and Power Expressions for a CMOS Inverter Driving a Resistive-Capacitive Load , 1996, 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96.

[36]  Laszlo Balogh Design And Application Guide For High Speed MOSFET Gate Drive Circuits By , 2006 .

[37]  I. Adesida,et al.  High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates , 1997 .

[38]  L. Eastman,et al.  Comparison of GaN HEMTs on Diamond and SiC Substrates , 2007, IEEE Electron Device Letters.