High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes
暂无分享,去创建一个
Jun-ichi Hashimoto | Tsukuru Katsuyama | Ichiro Yoshida | Jiro Shinkai | Hideki Hayashi | H. Hayashi | T. Katsuyama | J. Hashimoto | I. Yoshida | J. Shinkai
[1] Hamano Hiroshi,et al. 20 Gbit/s AlGaAs/GaAs-HBT 2:1 selector and decision ICs , 1991 .
[2] K. Kishino,et al. Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy , 1990 .
[3] K. Kishino,et al. Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers , 1991 .
[4] Y. Uematsu,et al. Short-wavelength (638 nm) room-temperature CW operation of InGaAlP laser diodes with quaternary active layer , 1990 .
[5] R. G. Waters,et al. High‐power, very low threshold, GaInP/AlGaInP visible diode lasers , 1991 .
[6] M. E. Givens,et al. Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers , 1986 .
[7] Akiko Gomyo,et al. Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering , 1990 .
[8] 応用物理学会. Extended abstracts of the ... Conference on Solid State Devices and Materials , 1983 .
[9] Naresh Chand,et al. High-temperature operation (to 180 °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers , 1991 .
[10] Kohroh Kobayashi,et al. Room-temperature CW operation of AlGaInP double-heterostructure visible lasers , 1985 .
[11] Masayuki Ishikawa,et al. Room temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition , 1986 .
[12] Jun-ichi Hashimoto,et al. Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode , 1990 .
[13] Kunishige Oe,et al. Energy band‐gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substrates , 1983 .
[14] Jun-ichi Hashimoto,et al. Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers , 1991 .
[15] David P. Bour,et al. High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser , 1987 .
[16] Masayuki Ishikawa,et al. Thermal analysis for InGaAlP laser diodes , 1988 .
[17] Masao Ikeda,et al. Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition , 1985 .
[18] K. Woodbridge,et al. Spontaneous recombination current in InGaAs/GaAs quantum well lasers , 1990 .