Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate
暂无分享,去创建一个
[1] U. Gösele,et al. Gas development at the interface of directly bonded silicon wafers: investigation on silicon-based pressure sensors , 1996 .
[2] A. Revesz. The Role of Hydrogen in SiO2 Films on Silicon , 1979 .
[3] D. Hamann,et al. Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy , 1996 .
[4] Low-temperature Si/Si wafer bonding using boride treated surface , 2007, 2009 Asia Communications and Photonics conference and Exhibition (ACP).
[5] Silicon direct bonding technology employing a regularly grooved surface , 1995 .
[6] J. Ayers,et al. Overshoot Graded Layers for Mismatched Heteroepitaxial Devices , 2008 .
[7] Eugene A. Irene,et al. A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures , 1982 .
[8] W. Maszara,et al. Bonding of silicon wafers for silicon‐on‐insulator , 1988 .
[9] W. Maszara. Silicon‐On‐Insulator by Wafer Bonding: A Review , 1991 .
[10] Manfred Reiche,et al. Ammonium Hydroxide Effect on Low-Temperature Wafer Bonding Energy Enhancement , 2005 .
[11] G. Wallis,et al. Field Assisted Glass‐Metal Sealing , 1969 .
[12] J. Raskin,et al. Low-temperature wafer bonding: a study of void formation and influence on bonding strength , 2005, Journal of Microelectromechanical Systems.
[13] U. Gösele,et al. SemiConductor Wafer Bonding: Science and Technology , 1998 .
[14] Hyundai Park,et al. A continuous-wave hybrid AlGaInAs-silicon evanescent laser , 2006, IEEE Photonics Technology Letters.
[15] Nicole Grobert,et al. Carbon nanotubes – becoming clean , 2007 .
[16] K. Tu,et al. Effect of Migration and Condensation of Pre-existing Voids on Increase in Bump Resistance of Flip Chips on Flexible Substrates during Electromigration , 2008 .
[17] R. Schlögl,et al. Analysis of Bonding‐Related Gas Enclosure in Micromachined Cavities Sealed by Silicon Wafer Bonding , 1997 .
[18] Klas Hjort,et al. Plasma-assisted InP-to-Si low temperature wafer bonding , 2002 .
[19] G. Kissinger,et al. Void-free silicon-wafer-bond strengthening in the 200–400 °C range , 1993 .
[20] Low temperature InP/Si wafer bonding , 2004 .
[21] S T Pantelides,et al. Reactions and diffusion of water and oxygen molecules in amorphous SiO2. , 2002, Physical review letters.
[22] P. Enquist,et al. Room temperature SiO2∕SiO2 covalent bonding , 2006 .
[23] Kuan-Neng Chen,et al. Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application , 2003 .
[24] U. Gösele,et al. Semiconductor wafer bonding , 1998 .
[25] John Bowers,et al. Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells. , 2005, Optics express.
[26] S. Ghandhi. VLSI fabrication principles : sil-icon and gallium arsenide , 1994 .