论文信息 - Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz - 字舞流文

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

G. Snider | D. Jena | H. Xing | P. Fay | T. Kosel | B. Sensale‐Rodriguez | Xiang Gao | Shiping Guo | Zongyang Hu | B. Song | Ronghua Wang | Guowang Li | Jia Guo | Y. Yue | F. Faria