Monte Carlo simulations of sputter atom transport in low-pressure sputtering: The effects of interaction potential, sputter distribution, and system geometry

A comparative study of the various model assumptions in Monte Carlo simulations of low‐pressure sputter‐atom transport is presented. The few‐collision conditions and actual ‘‘racetrack’’ magnetron geometry, typical of low‐pressure magnetron sputtering, are emphasized. For the gas phase scattering problem, a comparison is made between hard sphere, Lennard–Jones 6‐12, and Abrahamson Thomas–Fermi–Dirac [Phys. Rev. 178, 76 (1969)] interatomic potentials. The hard sphere potential results in both a significantly lower energy distribution and a more diffuse angular distribution for the depositing flux, as compared with the more realistic ‘‘softer’’ potentials. Because energy‐dependent cross sections are obtained when using the 6‐12 and Abrahamson potentials, an ‘‘energy filtering’’ effect is observed, i.e., high‐energy particles arrive at the substrate preferentially to those at low energy. It is concluded that the hard sphere model will lead to serious errors in both the energy and angular distributions of the arrival flux, and that the 6‐12 and Abrahamson potentials yield results that are similar to each other. For the nascent sputter distribution, fractal TRIM (transport of ions in matter) simulations are compared to the analytic Thompson distribution. While both distributions give nearly identical results for the angle‐integrated fluxes, the fractal TRIM distribution shows a strong angular dependence of the energy distribution. The implications of this effect for finite geometry systems are discussed.

[1]  J. Biersack,et al.  A Monte Carlo computer program for the transport of energetic ions in amorphous targets , 1980 .

[2]  M. W. Thompson II. The energy spectrum of ejected atoms during the high energy sputtering of gold , 1968 .

[3]  T. Motohiro,et al.  Applications of Monte Carlo simulation in the analysis of a sputter‐deposition process , 1986 .

[4]  J. Ziegler THE STOPPING AND RANGE OF IONS IN SOLIDS , 1988 .

[5]  W. D. Westwood,et al.  Calculation of deposition rates in diode sputtering systems , 1978 .

[6]  T. Motohiro,et al.  Monte Carlo simulation of the particle transport process in sputter deposition , 1984 .

[7]  J. Abelson,et al.  Energy Resolved Mass Spectrometry of the a-Si:D Film Growth Species During DC Magnetron Sputtering , 1990 .

[8]  G. K. Wehner,et al.  Angular Distribution of Sputtered Material , 1960 .

[9]  W. Eckstein Energy distributions of sputtered particles , 1986 .

[10]  R. Somekh The thermalization of energetic atoms during the sputtering process , 1984 .

[11]  R. Behrisch,et al.  Sputtering by Particle Bombardment III: Characteristics of Sputtered Particles, Technical Applications , 1991 .

[12]  David N Ruzic,et al.  Monte Carlo simulations of magnetron sputtering particle transport , 1991 .

[13]  J. Gillis,et al.  Classical dynamics of particles and systems , 1965 .

[14]  Mark T. Robinson,et al.  Computer simulation of the self‐sputtering of uranium , 1983 .

[15]  Adolf A. Abrahamson,et al.  Born-Mayer-Type Interatomic Potential for Neutral Ground-State Atoms with Z=2 to Z=105 , 1969 .

[16]  R. Asomoza,et al.  Monte Carlo simulation of the transport process in the growth of a‐Si:H prepared by cathodic reactive sputtering , 1990 .

[17]  J. R. Pierce,et al.  Scientific foundations of vacuum technique , 1949 .

[18]  S. Rossnagel Sputtered atom transport processes , 1990 .

[19]  G. Wehner,et al.  Mass effects on angular distribution of sputtered atoms , 1979 .

[20]  J. Biersack,et al.  Sputtering studies with the Monte Carlo Program TRIM.SP , 1984 .

[21]  G. M. Turner,et al.  Monte Carlo calculation of the thermalization of atoms sputtered from the cathode of a sputtering discharge , 1989 .

[22]  N. Chencinski,et al.  Selective thermalization in sputtering to produce high T c films , 1975 .

[23]  G. Wehner Isotope enrichment in sputter deposits , 1977 .

[24]  D. Ruzic The effects of surface roughness characterized by fractal geometry on sputtering , 1990 .

[25]  Robert J. Kee,et al.  A Mathematical Model of Silicon Chemical Vapor Deposition Further Refinements and the Effects of Thermal Diffusion , 1986 .