We demonstrate for the first time Schottky barrier height (SBH) tuning using interfacial SiO2/high-kappa dipoles resulting in SBH les 0.1 eV from the conduction band-edge (CBE) and SBH les 0.2 eV from the valence band-edge (VBE). The near band-edge electron and hole SBHs have been obtained using a dielectric-dipole mitigated (DDM) scheme with single metal on Si junction. By optimizing the dielectric thickness, we obtained effective dipole modulation to the SBH of +0.5 and -0.3 eV for AlOx/SiO2 and LaOx/SiO2, respectively, demonstrating reductions in SBH and contact resistance that are necessary for continued enhanced performance in future technology nodes.