Growth and characterization of indium antimonide and gallium antimonide crystals

Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

[1]  P. Etter,et al.  An investigation into the apparent purity limit in GaSb , 1963 .

[2]  O. Hildebrand,et al.  Ga 1-x Al x Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients , 1981 .

[3]  K. Fujibayashi,et al.  Coherent Gunn oscillations in Ga x In 1-x Sb , 1976 .

[4]  M. Pilkuhn,et al.  Luminescence and Photoconductivity of Undoped p-GaSb , 1972, July 16.

[5]  A. G. Milnes,et al.  Gallium antimonide device related properties , 1993 .

[6]  Y. J. V. D. Meulen.  Facet effect and electrical conductivity in undoped pulled GaSb crystals , 1964 .

[7]  T. Geballe,et al.  Hall Effect and Conductivity of InSb , 1955 .

[8]  C. Kittel,et al.  Cyclotron and Spin Resonance in Indium Antimonide , 1955 .

[9]  H. Y. Fan,et al.  OPTICAL AND ELECTRICAL STUDIES OF ELECTRON-BOMBARDED GaSb , 1965 .

[10]  Arden Sher,et al.  InTlSb: An infrared detector material? , 1993 .

[11]  B. Ridley,et al.  On the properties of InSb quantum wells , 1984 .

[12]  B. Hamilton,et al.  A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxy , 1986 .

[13]  E. Lendvay,et al.  Direct synthesis and crystallization of GaSb , 1981 .

[14]  G. Motosugi,et al.  Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH Lasers , 1980 .

[15]  Y. Shibata,et al.  GaSb Schottky diodes for infrared detectors , 1981, IEEE Transactions on Electron Devices.

[16]  H. Arend,et al.  Crystal growth in science and technology , 1990 .

[17]  J. Woolley,et al.  Electron transport and conduction band structure of GaSb , 1981 .

[18]  J. Fousek,et al.  Twinning in Crystals , 1989 .

[19]  G. Kozhemyakin.  Influence of ultrasonic vibrations on the growth of InSb crystals , 1995 .

[20]  M. Kumagawa,et al.  Analysis of impurity concentration distributions in pulled semiconductor crystals , 1990 .

[21]  F. Moravec.  Growth and characterization of GaSb single crystals , 1992 .

[22]  P. Hubík,et al.  Sulphur-doped GaSb single crystals , 1993 .

[23]  G. Müller,et al.  GaSb and InSb crystals grown by vertical and horizontal travelling heater method , 1979 .

[24]  S. Basu,et al.  Bulk growth of gallium antimonide crystals by Bridgman method , 1990 .

[25]  S. Miyazawa,et al.  Low dislocation density GaSb single crystals grown by LEC technique , 1982 .

[26]  Santos,et al.  Raman scattering from GaSb/AlSb superlattices: Acoustic, optical, and interface vibrational modes. , 1988, Physical review. B, Condensed matter.

[27]  W. I. Wang,et al.  Intersubband absorption in Ga1-xAlxSb/AlSb superlattices for infrared detection , 1991 .

[28]  Georg Müller,et al.  Tenfold growth rates in the travelling heater method of GaSb crystals by forced convection on a centrifuge , 1983 .

[29]  M. M. Carvalho,et al.  A simple technique for Czochralski growth of GaSb single crystals from scum-free melt , 1995 .

[30]  S. Courtney,et al.  The Czochralski growth of gallium antimonide single crystals under reducing conditions , 1982 .

[31]  F. Capasso,et al.  Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm , 1980 .

[32]  B. Hamilton,et al.  Spectroscopic studies of shallow defects in MBE GaSb , 1987 .

[33]  R. Keyes.  Effect of Pressure on the Electrical Conductivity of InSb , 1955 .

[34]  B. Štěpánek,et al.  Czochralski grown concentration profiles in the undoped and Te-doped GaSb single crystals , 1992 .

[35]  P. Dutta,et al.  Photoluminescence studies in bulk gallium antimonide , 1995 .

[36]  L. Esaki,et al.  Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells , 1986 .