Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition

[1]  S. Fujita,et al.  Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition , 2012 .

[2]  M. Furuta,et al.  Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition , 2012 .

[3]  Akito Kuramata,et al.  Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy , 2012 .

[4]  Hiroshi Ito,et al.  Evaluation of Misfit Relaxation in α-Ga2O3 Epitaxial Growth on α-Al2O3 Substrate , 2012 .

[5]  Akito Kuramata,et al.  Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates , 2012 .

[6]  I. Tanaka,et al.  Epitaxial growth of Mn-doped γ-Ga_2O_3 on spinel substrate , 2011 .

[7]  Steffen Ganschow,et al.  Czochralski growth and characterization of β‐Ga2O3 single crystals , 2010 .

[8]  T. Tiedje,et al.  Epitaxial Nd-doped α-(Al(1-x)Ga(x))2O3 films on sapphire for solid-state waveguide lasers. , 2010, Optics letters.

[9]  Z. Al-Othman,et al.  Kinetic Studies of the Non-Isothermal Decomposition of Unirradiated and Γ-Irradiated Gallium Acetylacetonate , 2010 .

[10]  S. Fujita,et al.  Fabrication of Highly Crystalline Corundum-Structured α-(Ga1-xFex)2O3 Alloy Thin Films on Sapphire Substrates , 2009 .

[11]  Takayoshi Oshima,et al.  Flame Detection by a β-Ga2O3-Based Sensor , 2009 .

[12]  Hideo Aida,et al.  Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method , 2008 .

[13]  S. Fujita,et al.  Heteroepitaxy of Corundum-Structured α-Ga2O3 Thin Films on α-Al2O3 Substrates by Ultrasonic Mist Chemical Vapor Deposition , 2008 .

[14]  Takayoshi Oshima,et al.  Ga2O3 Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors , 2007 .

[15]  A. Kuwabara,et al.  Structures and energetics of Ga2O3 polymorphs , 2007 .

[16]  Ravi Droopad,et al.  Development of GaAs-based MOSFET using molecular beam epitaxy , 2007 .

[17]  Rong Huang,et al.  Room temperature ferromagnetism in Mn-doped gamma-Ga2O3 with spinel structure , 2006 .

[18]  Hideo Hosono,et al.  Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3 , 2006 .

[19]  Hideo Hosono,et al.  Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor , 2006 .

[20]  K. Shimamura,et al.  Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O3 , 2006 .

[21]  Noboru Ichinose,et al.  Large-size β-Ga2O3 single crystals and wafers , 2004 .

[22]  F. Aldinger,et al.  Microstructural and thermodynamic study of γ-Ga2O3 , 2004, International Journal of Materials Research.

[23]  O. Gorbenko,et al.  Epitaxial Stabilization of Oxides in Thin Films , 2002 .

[24]  Minghwei Hong,et al.  Optical properties of gallium oxide thin films , 2002 .

[25]  Mitio Inokuti,et al.  A generalized Cauchy dispersion formula and the refractivity of elemental semiconductors , 2001 .

[26]  M. Takano,et al.  Preparation and characterization of (111)‐oriented Fe3O4 films deposited on sapphire , 1989 .

[27]  Y. Takéuchi,et al.  Anharmonic thermal vibrations of atoms in MgAl2O4 spinel at temperatures up to 1933 K , 1984 .

[28]  N. Ishizawa,et al.  A structural investigation of α‐Al2O3 at 2170 K , 1980 .

[29]  J. P. Remeika,et al.  Bond Lengths in the α‐Ga2O3 Structure and the High‐Pressure Phase of Ga2−xFexO3 , 1967 .

[30]  Rustum Roy,et al.  Polymorphism of Ga2O3 and the System Ga2O3—H2O , 1952 .

[31]  J. Narayan,et al.  Domain epitaxy: A unified paradigm for thin film growth , 2003 .

[32]  K. Choy Chemical vapour deposition of coatings , 2003 .

[33]  M. Takano,et al.  CEMS study of the growth and properties of Fe3O4 films , 1990 .