InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 µm wavelength

We summarize our work on back-illuminated photodiodes based on the As-Ga-In-P III-V semiconductor system which, with InP substrates, can provide photodetectors to cover the wavelength range of 0.93-1.65 \mu m. LPE layer growth and material purification techniques are described, as well as the fabrication and characterization of p-i-n photodiodes made from these compounds. The relevant device parameters and their optimization are discussed, and the performance of high-bit-rate optical receivers employing the new detectors is noted. Finally, we suggest some areas where further research might lead both to a better understanding of carrier transport in these heterojunction configurations and to improved devices made from them.

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