DRAMScale: Mechanisms to Increase DRAM Capacity

New resistive memory technologies promise scalability and non-volatility but suffer from longer, asymmetric read-write latencies and lower endurance, placing the burden of system design on architects. In order to avoid such pitfalls and still provision for exascale data requirements using a much faster DRAM technology, we introduce DRAMScale. It features three novel mechanisms to increase DRAM density while complementing technology scaling and creating a new capacity-optimized DRAM system. Such optimizations enable us to build a two-tier memory system that meets memory latency and capacity requirements.